The nature and density of secondary microstructural defects, which were produced by 100keV irradiation, were shown to be independent of the intensity and depended only upon the total flux. The rate of defect formation increased linearly with increasing beam intensity. The susceptibility to ion milling and electron beam irradiation damage decreased in the order: ZnS - ZnSe - CdTe. The estimated time for the charge relaxation of a multiply ionized CdTe anion was between 2 x 10-14 and 6 x 10-14s. The interaction of generated point defects with native dislocations led to the production of dipole structures.

Y.Y.Loginov, P.D.Brown, N.Thompson: Physica Status Solidi A, 1991, 127[1], 75-86