Lattice defects in Cr-doped single crystals, which had been grown using the solvent evaporation technique, were investigated by using transmission electron microscopy. The effect of post-growth annealing at 300 to 900C, under a Cd over-pressure, was examined. The main defects in the as-grown crystals were dislocations, tetrahedral stacking faults and precipitates. After post-growth annealing, various precipitate shapes and dislocation tangles were observed. The precipitates were found to be alloys of Cr and Te.

A.Nouruzi-Khorasani, P.S.Dobson: Journal of Crystal Growth, 1988, 92, 208-14