The structure and the depth distribution of the damage which was caused by the 100keV Er-ion implantation of [111]-type material to a dose of 5 x 1015/cm2 at liquid-N temperatures was investigated by using planar and cross-sectional transmission electron microscopy. It was found that implantation disturbed the target to depths which were well beyond the calculated projected range. The resultant damage structure consisted of well-defined defects such as precipitates, stacking faults, dislocation loops and dislocation networks. These appeared to be segregated in depth, and formed a sequence of homogeneously faulted zones. This characteristic deep damage was suggested to have formed during dynamic annealing, as a result of internal stresses which were caused by lattice parameter mismatch. These stresses were high enough to produce plastic relaxation; with dislocation generation and slip.

J.Morawiec, Z.Golacki: Crystal Research and Technology, 1991, 26[1], 53-8