Epitaxial layers of (111)-type material were grown onto (111)CdTe, (111)GaAs, or (100)GaAs. Cross-sectional transmission electron microscopy revealed the presence of many lamellar twins which lay parallel to the substrate/layer interface. On the other hand, (100)-type CdTe which had been deposited onto (100)GaAs contained a large number of misfit dislocations at the interface.

P.D.Brown, J.E.Hails, G.J.Russell, J.Woods: Journal of Crystal Growth, 1988, 86[1-4], 511-5