Transmission and high-resolution electron microscopy and low-energy beams were used to study the effect of doping with Cu, P, In and Cl upon the formation of structural defects in material which had been bombarded with 3.5keV Ar+ and I+ ions, and 400keV electrons. It was found that, in doped samples, laminar precipitates formed in addition to so-called ordinary dislocation loops. Moiré contrast analysis showed the precipitates to be compounds of Cd, in P-doped material, and compounds of Te in In- or Cu-doped material.

J.J.Loginov, P.D.Brown, C.J.Humphreys: Fizika Tverdogo Tela, 1996, 38[4], 1251-61 (Physics of the Solid State, 1996, 38[4], 692-7)