Transmission electron microscopic observations were performed in situ during the 100keV P ion implantation of monocrystals, to fluences of up to 1015/cm2, at room temperature. Beneath a defect-depleted zone, whose thickness increased with total fluence, interstitial loops lying in a {110} plane were observed. At least 2 Burgers vector types, <100> and <110>, were identified. The results were explained in terms of a high interstitial defect mobility.

G.Leo, M.O.Ruault: Journal of Applied Physics, 1993, 73[5], 2234-8