Microscopic studies, compositional analyses and studies of microhardness had shown that the epitaxial CdTe/CdHgTe variband heterosystem contained a developed system of dislocation ensembles of various nature (in-grown, mismatching, generated on the joint boundaries of three-dimensional islands, etc.) with segments inclined or parallel to the interface. It was established that there was a correlation between an increase (inhomogeneous through the thickness) in the microhardness of the heterosystem and the distribution of the dislocation density in the epitaxial layer.

Generation of Dislocations in the CdTe/CdHgTe Variband Heterosystem at the Initial Stages of Epitaxial Growth. A.I.Vlasenko, Z.K.Vlasenko, I.V.Kurilo, I.A.Rudyĭ: Physics of the Solid State, 2006, 48[3], 464-70