A method was presented for describing the atomic positions around misfit dislocations which lay along a planar interface. It involved both discrete (structural units repeated along the interface) and continuous (anisotropic elasticity of heterogeneous media) information. A suitable computer implementation of the method was applied to (001)CdTe/(001)GaAs interfaces. Any 2 crystal structures could be taken into account.

R.Bonnet, M.Loubradou: Physical Review B, 1994, 49[20], 14397-402