The diffusivity of Si in thin samples was estimated by analysing layer growth kinetics, during carbonization using various growth techniques. The diffusion of Si was described by the classical parabolic law, as well as by models which took account of the peculiarities of carbonization. In general, low diffusion coefficients corresponded to layers with good morphological and structural properties. The best results were obtained by chemical vapour deposition.

The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers V.Cimalla, T.Wöhner, J.Pezoldt: Materials Science Forum, 2000, 338-342, 321-4