It was pointed out that, when annealed, thin amorphous deposits of highly lattice-mismatched materials provided specular crystalline surfaces for epitaxial deposition. The mismatch strain was relieved mainly by misfit dislocations which propagated within the plane of the interface, so that the resultant films had low threading dislocation densities. This concept was applied to the growth of (001)-oriented CdTe on (001) GaAs.

N.K.Dhar, C.E.C.Wood: Journal of Applied Physics, 1995, 78[7], 4463-6