Geometrical examination of the GaAs/CdTe interface, together with chemical bonding considerations, were used to predict that CdTe growth began on the Ga-stabilized (100) GaAs surface with a Te layer, such that [2¯1¯1]||[011]GaAs and [01¯1]CdTe||[01¯1]GaAs. The growth orientation was a [¯1¯1¯1] direction with a Te(B) surface as the top layer, and a periodic array of lattice defects was present at the GaAs/CdTe interface; with a period of 2 x 1.59nm along the [01¯1] direction. This accommodated the lattice mismatch. The defects were interpreted as being a new type of misfit dislocation network having both an edge and a screw character.

B.Ortner, G.Bauer: Journal of Crystal Growth, 1988, 92, 69-76