The growth of (111) CdTe on misoriented (001) GaAs substrates was studied. It was found that the growing of CdTe on GaAs substrates with Ga steps resulted in twin-free layers. This was not the case for As steps. An important parameter was the tilt of the (111) CdTe planes with respect to the (001) GaAs planes, as a function of the substrate misorientation. A model was proposed which established a correspondence between the measured tilt and the presence of interface dislocations. The model took account of the effect of the surface morphology upon the suppression of twins.

E.Ligeon, C.Chami, R.Danielou, G.Feuillet, J.Fontenille, K.Saminadayar, A.Ponchet: Journal of Applied Physics, 1990, 67[5], 2428-33