Photoluminescence from a [(CdTe)m/(ZnTe)n]l/ZnTe multi quantum-well system, where l was between 2 and 10, was observed at various temperatures. The well region of the system was composed of short-period strained-layer superlattices (where m and n ranged from 2 to 4), and the number of misfit dislocations was reduced by widely spreading the internal strain. Experimental data showed that the full-width at half-maximum of the exciton line was very narrow, and proved that this sample was of very high quality. The photoluminescence line which arose from valence band splitting due to internal strain was observed. The line had a tail on its low-energy side. It was suggested that it arose from disorder of the atomic alignment at interfaces.

S.Yoshimura, H.Nakata, T.Ohyama, E.Otsuka, J.Li: Superlattices and Microstructures, 1993, 13[3], 393-6