Conditions were determined for the delineation of dislocation etch figures by chemical etching. It was found that crystals which were grown from stoichiometric melts by using the Bridgman method contained Te micro-inclusions. A method was developed for the elimination of such inclusions by combining annealing treatments with the continuous  in situ  monitoring of the behavior of dislocation etch pits.

J.A.Ugai, A.E.Popov, A.M.Samoilov, A.J.Zavrazhnov, K.P.Kurbanov, O.V.Nekrasov: Neorganicheskie Materialy, 1995, 31[1], 37-50 (Inorganic Materials, 1995, 31[1], 34-7)