Diffuse X-ray scattering near to Bragg peaks was used to characterize structural defects that were introduced by the implantation of 320keV Al ions into (111) Hg0.8Cd0.2Te crystals at liquid N or ambient temperatures. In the former case, it was shown that low-temperature implantation produced a highly compressed layer that was located near to the region of maximum nuclear ion energy-loss. A marked redistribution of the implantation damage was shown to occur around 150K. In the latter case, interstitial dislocation loops were shown to be the principal implantation defects. Point-defect saturation was observed following a fluence of 5 x 1013/cm2.

A.Declémy, P.O.Renault: Journal of Crystal Growth, 1996, 161, 139-43