It was recalled that the generation of even a relatively low density (less than 107/cm2) of dislocations led to significant variations in the kinetic coefficients of CdxHg1–xTe crystals (where x was 0.20 to 0.21). In n-type crystals, a substantial decrease in electron mobility occurred, together with a marked increase in electron concentration. In p-type crystals, a transition from activation conductivity to metallic was observed at 4.2 to 40K; together with an alternating-sign behavior of the Hall coefficient, depending upon the temperature and magnetic-field strength. A predominant role in the observed modifications was played by the electronic states of point defects which formed during dislocation motion rather than by the dislocations themselves. All of the data could be explained in terms of the formation of connected channels, of opposite-type conductivity, in the form of a 3-dimensional dislocation network in the matrix of the main crystal.

Electrical Activity of Dislocations and Point Defects of Deformation Origin in CdxHg1–xTe Crystals. S.G.Gasanzade, S.V.Staryĭ, M.V.Strikha, G.A.Shepelskiĭ: Semiconductors, 2003, 37[1], 6-14