The influence of dislocations on the parameters of diodes fabricated on p-type Cd0.22Hg0.78Te layers grown by molecular beam epitaxy was investigated. The n-region of diodes was formed by Hg thermodiffusion from anodic oxide. To introduce dislocations some diodes from the array were subjected to a pressure of 107 to 6 x 107N/m2. It was found that, after applying a pressure of more than 4 x 107N/m2, the diode parameters degraded due to an increasing trap concentration with energies of Et1 = Ev + 0.035eV and Et2 = Ev + 0.043eV. It was suggested that these traps were connected with dislocations.

Influence of Dislocations on MBE Cd0.22Hg0.78Te/GaAs Photodiodes. L.N.Romashko, A.G.Klimenko, V.N.Ovsyuk, V.V.Vasilyev, V.V.Voinov, A.E.Plotnikov: Physica Status Solidi A, 2001, 186[3], 445-52