It was shown that the temperature dependence of the minority carrier lifetime in samples with differing dislocation densities could be accounted for by including the dislocation contribution in addition to the contribution of well-known radiative, Auger and Shockley-Read recombination mechanisms. The dislocation contribution to the minority carrier lifetime was calculated on the basis of a recently proposed model which treated dislocation as a discontinuity of the lattice.

Effect of Dislocations on Minority Carrier Lifetime in HgCdTe. V.Gopal, S.Gupta: Journal of Applied Physics, 2004, 95[5], 2467-72