A study of the contribution of dislocations to the zero-bias resistance-area product (R0A) of long-wavelength infra-red n-on-p HgCdTe diodes was carried out from the modelling of the temperature dependence of R0A product of diodes fabricated in a material of known dislocation density. The capture probabilities of electrons and holes relevant to the modelling of the effect of dislocations in p-type HgCdTe were thus evaluated. The general applicability of these parameters was further verified by using them to model the temperature variation of the R0A of the diodes reported by other groups. Results of the present study showed that dislocations degrade the impedance of HgCdTe diodes at low temperatures on accounted of their shunt-resistance behavior rather than the commonly accepted dislocation-assisted tunnelling mechanism.

A Study of Dislocation Contribution from the Temperature Dependence of Zero-Bias Resistance-Area Product of Long-Wavelength n-on-p Mercury Cadmium Telluride Diodes. V.Gopal, S.Gupta: Physica Status Solidi A, 2005, 203[2], 397-403