Dislocations were introduced into Hg1-xCdxTe monocrystals, where x was approximately equal to 0.2, by plastic deformation or by high-dose Al implantation. Structural analysis of implanted samples, using Huang’s method, showed that the dislocation loops were mainly of interstitial type; with a radius of about 2.6nm. Hall-effect measurements of the properties of uniaxially deformed samples revealed the presence of acceptor-like dislocations as well as donor-type point defects.

P.O.Renault, J.F.Barbot, P.Girault, A.Declemy, G.Rivaud, C.Blanchard: Journal de Physique III, 1995, 5[9], 1383-9