The stresses which led to defect structure formation during the epitaxial growth of films in a film/substrate system were analyzed. It was deduced that the smallest elastic stresses would occur in CdHgTe films which were grown on a substrate with an (001) orientation, since the mismatch dislocation density was greatest for this case.

E.M.Zonshain: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1989, 25[9], 1562-4. (Inorganic Materials, 1989, 25[9], 1323-4)