The elastic properties of misfit dislocations in heterostructures were investigated in epitaxial layers which had been grown onto monocrystalline CdTe substrates by using the isothermal vapour-phase method. Calculations were carried out for the zero-Cd case because the resultant values then represented inequalities. The interface energy density was estimated to be equal to 2.461μJ/m2. The calculated values of the misfit dislocation spacings for various dislocation directions in the interface were of the order of 0.14 and 0.199μm. The values of the surface densities of dangling bonds which corresponded to the (100), (110) and (111) planes were estimated to be 6.20 x 1012, 4.39 x 1012 and 3.58 x 1012/cm2, respectively. The critical pseudomorphic growth thickness was deduced to be 0.036μm. The elastic strain in the system was equal to 2.8 x 107. The thermal stress in the heterostructures was of the order of 36MPa.

Misfit Dislocations and Stresses in CdHgTe/CdTe Heterojunctions I.V.Kurilo, I.O.Rudyi, O.I.Vlasenko: Journal of Crystal Growth, 1999, 204[4], 447-52