The effects of interfacial lattice mismatch upon CdHgTe epitaxial layers which were grown by metalorganic chemical vapor deposition were investigated. The CdHgTe was found to be easily affected by a lattice mismatch of less than 0.1%. It was also shown that mismatched CdHgTe layers in tension tended to deteriorate more easily than those which were in compression. This asymmetrical behavior was explained by using a schematic model for the lattice structure. The behavior was attributed to the asymmetrical dislocation distribution which was caused by the presence of excess Hg vacancies, as well to the sign of the misfit strain and to the differing lattice structures.

L.Sugiura, K.Shigenaka, F.Nakata, K.Hirahara: Journal of Crystal Growth, 1994, 145[1-4], 547-51