The effects of a Hg partial pressure upon the defect density in material which had been grown by means of metalorganic chemical vapor deposition were investigated. A large number of Hg clusters was revealed by transmission electron microscopy in specimens which had been prepared under a high Hg partial pressure. Some dislocation loops seemed to originate on Te interstitials in layers which had been grown under low Hg partial pressures. All of the specimens exhibited n-type conduction according to Hall effect measurements. It was found that the Hall coefficient under a Hg partial pressure of less than 0.02atm was controlled by that pressure. On the other hand, the Hall coefficient under a Hg partial pressure which was above 0.02atm could not be controlled by varying that partial pressure. Therefore, impurity doping was suggested to be suitable for controlling the hole concentration in the region of high Hg pressure.

K.Shigenaka, T.Kanno, M.Saga, T.Uemoto, L.Sugiura, K.Ichizono, K.Hirahara: Journal of Crystal Growth, 1992, 117, 49-53