Film samples which were grown in the (100) orientation, via molecular beam epitaxy, tended to exhibit superior electrical properties to those of (111) films. Samples with the latter orientation, when grown under conditions which led to well-streaked reflection high energy electron diffraction patterns, still contained a columnar microstructure with a high density of twins and dislocations. Transmission electron microscopy and Auger sputter profiling data suggested that the films suffered from island nucleation which was caused by the adsorption of Hg onto the CdTe buffer layers.

R.D.Feldman, S.Nakahara, R.L.Opila, R.F.Austin, T.Boone: Journal of Crystal Growth, 1989, 98[4], 581-9