The effects of HgTe layers upon dislocations were studied in (111)B layers that had been grown onto Si substrates by means of metalorganic vapor phase epitaxy. It was found that the dislocations in HgCdTe layers were reduced by inserting thin HgTe layers between HgCdTe and CdTe buffer layers. By using this method, a dislocation density of 2.3 x 106/cm2 was obtained. This was less than 25% of the density in HgCdTe layers without HgTe coverage.

T.Okamoto, T.Saito, S.Murakami, H.Nishino, K.Maruyama, Y.Nishijima, H.Wada, M.Nagashima, Y.Nogami: Applied Physics Letters, 1996, 69[5], 677-9