Admittance spectroscopy and deep-level transient spectroscopy were applied to n+-on-p Hg0.405Cd0.595Te planar photodiodes which had been grown by zone melting. After 1Mrad γ-irradiation, a new trap center was observed at 0.19eV above the valence band, while the usual 0.15eV trap-level disappeared. The trap densities for the 2 levels were almost the same. This was attributed to the effect of the γ-irradiation, which produced a compound defect that was related to the Hg vacancy.

X.Hu, J.Fang, Q.Wang, J.Zhao, H.Lu, H.Gong, S.Zhang, F.Lu: Applied Physics Letters, 1998, 73[1], 91-2