Samples of p-type and n-type material were bombarded with 2MeV electrons and 60Co γ-rays. The 1.1eV emission band, produced by electron irradiation at 77K, annealed out in a stage centered on about 120K. It originated from a defect which included a Te vacancy. Electron and γ bombardment at 77K, and annealing at room temperature, and neutron irradiation at 300K, enhanced the 1.53 and 1.55eV emission bands. An annealing stage centered on about 370K was observed in the electrical properties of relatively pure p-type material bombarded with electrons and γ rays. The defect migration could be described by:

m (/s) = 1 x 108 exp[-0.8(eV)/kT]

Thus suggesting the long-range movement of Cd vacancies. Electron-trap levels at 0.058 and 0.5eV below the conduction band were observed in crystals which were bombarded with γ rays. The former annealed out at 600K, and was tentatively attributed to a complex which involved Te vacancies.

T.Taguchi, Y.Inuishi: Journal of Applied Physics, 1980, 51[9], 4757-69