It was noted that halogen-doped material had an unidentified electron trapping level at 0.05eV. In addition to the 2-defect complex, VCdXTe, the 3-defect complex, VCd2XTe, was present in substantial concentrations. It was estimated that the latter complex could give rise to the observed trapping level.

R.O.Bell: Solid State Communications, 1975, 16[7], 913-6