Electron paramagnetic resonance spectroscopic observations were made of a new intrinsic paramagnetic defect in Ge-doped bulk samples. It was attributed to the A-centre; a donor/Cd-vacancy defect. It was characterized by its monoclinic symmetry and g1 = 1.9483, g2 = 2.0035, g3 = 2.1697. Its concentration was between 1011 and 1016/cm3, and its estimated energy level was Ev+0.6eV.

Intrinsic defects in photorefractive bulk CdTe and ZnCdTe H.J.Von Bardeleben, T.Arnoux, J.C.Launay: Journal of Crystal Growth, 1999, 197[3], 718-23