The effect of implanted Cd and Te atoms upon As- or Cl-doped material was investigated by means of depth-resolved cathodoluminescence measurements at 80K. Pulsed ruby laser annealing was carried out using energy densities of 0.16 to 0.32J/cm2. In the case of In-doped material, the annealing tended to promote a strong defect reaction which led to a marked luminescence at 1.17eV. it was concluded that this band resulted from the reaction of one component of the ion-species independent post-range damage , such as O, to yield OTe. Similar experiments performed on Cl-doped substrates led to only a weak 1.17eV band.

C.B.Norris, P.S.Peercy: Radiation Effects, 1983, 69[3-4], 267-75