A study of point defects in II-VI compounds revealed that open-volume defects were present in a large number of them. Samples of CdTe contained neutral monovacancy-sized defect complexes in concentrations of the order of 1017/cm3. When a small amount of Zn or Se was added to CdTe, the defect profile changed markedly to one which was dominated by divacancy-sized defects having roughly half the original concentration.

Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy G.Tessaro, P.Mascher: Journal of Crystal Growth, 1999, 197[3], 581-5