Local vibrational modes which were associated with acceptor impurity-H pairs were detected in samples of As-doped CdTe (2021/cm) which had been grown by means of metalorganic chemical vapor deposition. The annealing of As-doped CdTe led to a marked increase in the electrical activity of As after heat treatment (350C, 600s), and complete H out-diffusion was found after annealing at 350C for 1200s.

L.Svob, Y.Marfaing, B.Clerjaud, D.Cote, D.Ballutaud, B.Theys, R.Druilhe, W.Kuhn, H.Stanzl, W.Gebhardt: Materials Science Forum, 1994, 143-147, 447-52