Specimens of 6H-type material were implanted with P at high temperatures, and annealed at up to 1700C. The relationship between the electrical activation of P atoms and the recovery of defective layers was investigated by means of Hall-effect measurements and positron annihilation spectroscopy. The clustering of vacancy-type defects, due to post-implantation annealing, was suppressed by implantation at high temperatures. The implantation-temperature dependence of the carrier concentration in the samples was explained in terms of the annealing behaviour of residual defects.

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions T.Ohshima, A.Uedono, H.Itoh, M.Yoshikawa, K.Kojima, S.Okada, I.Nashiyama, K.Abe, S.Tanigawa, T.Frank, G.Pensl: Materials Science Forum, 2000, 338-342, 857-60