An interfacial layer, about 1nm thick, was prepared by depositing Sm onto (001) CdTe which had been grown by molecular beam epitaxy. This layer was studied by using reflection high-energy electron diffraction, ion channelling, and X-ray diffraction methods. A correlation was found, between the (1 x 2) reflection high-energy electron diffraction pattern and the {111} CdTe stacking sequence, which favored the surface Te dimerization hypothesis. Lattice location by means of ion channelling revealed that incorporated Sm occupied mainly octahedral sites in the Te sub-lattice. A CdTe overlayer which was grown onto the interfacial layer exhibited a 90 rotation, about the [001] direction, with respect to the CdTe buffer. It was confirmed, by ion channelling, that the overlayer exhibited a bulk-like crystallinity. Superlattices which comprised many of the present basic periods were grown at 270C, and the various experimental features were tentatively interpreted by assuming the formation of an interfacial layer which had the spinel structure.

A.C.Chami, B.Daudin, J.Fontenille, P.Gros, E.Ligeon: Journal of Applied Physics, 1993, 74[1], 237-43