Low-temperature photoluminescence measurements were made of nominally undoped or Cl-doped bulk material, and of undoped or In-doped molecular beam epitaxial layers. By considering the magnetic field dependence of free-to-bound transitions, the effective mass of the conduction band electron and the binding energies of acceptors were obtained. By analyzing the energetic shifts and splittings of the 1.4eV luminescence band, it was possible to distinguish 2 recombinations of completely different type. The 1.452eV line was a (D°,A°) and (e,A°) transition, where the acceptor was probably Cu and had a binding energy of 0.1472eV. A luminescence which was located near to 1.475eV was attributed to a (D°,h) transition. The donor was deep (0.131eV) and was suggested to be a ClI-ClTe complex.

T.A.Kuhn, W.Ossau, A.Waag, R.N.Bicknell-Tassius, G.Landwehr: Journal of Crystal Growth, 1992, 117, 660-5