A theoretical analysis was offered for the formation and development of defects in samples which were implanted with N and Al ions and annealed. The diffusion of defects, the formation of complexes and the influence of internal elastic stress fields - produced by the implanted ions and created complexes - upon the migration of interstitials were taken into account. The predicted defect distributions agreed satisfactorily with the experimental data.

Physical Model for the Evolution of the Defect System of Silicon Carbide with Allowance for the Internal Elastic Stress Fields during Implantation of Al+ and N+ and Subsequent Annealing D.V.Kulikov, Y.V.Trushin, P.V.Rybin, V.S.Kharlamov: Technical Physics, 1999, 44[10], 1168-74