The presence of hole traps in p-type material was studied by means of deep-level transient spectroscopy. Two hole traps (H1, H2), with activation enthalpies of 0.26 and 0.61eV, respectively, were detected. Both traps acted as donor point defects, with entropies of 0.00024eV/K (H1) and 0.00085eV/K (H2). The capture cross-sections were found to be temperature independent, and were approximately equal to 3 x 10-18 and 1.2 x 10-17cm2, respectively. The concentration of H1 defects was greatest (about 1013/cm3) at points which were close to the surface, whereas the H2 defects seemed to be located at about 0.5 from the surface (with a concentration of 2 x 1012/cm3).

J.Szatkowski, E.Placzek-Popko, A.Hajdusianek: Journal of Physics - Condensed Matter, 1994, 6[39], 7935-40