Scanning electron microscopic cathodoluminescence methods were used to investigate the relationship between point defects, in undoped or V-doped material, and luminescence bands at 1.40 and 1.13eV. It was found that V inhibited the 1.40eV luminescence. Annealing experiments indicated that Cd and Te vacancies were involved in the appearance of the above emission bands.

U.Pal, J.Piqueras, P.Fernández, M.D.Serrano, E.Dieguez: Journal of Applied Physics, 1994, 76[6], 3720-3