Measurements of high-temperature electrical properties were carried out on Bridgman single crystals. Fast-diffusing impurities were extracted by immersion in CdTe-Te melts. At temperatures of between 700 and 850K, a carrier concentration dependence upon the Te vapor pressure was observed. An analysis of the results indicated the involvement of both native and foreign point defects in the high-temperature defect equilibrium.

O.Panchouk, P.Fochouk, P.Feichouk: Journal of Crystal Growth, 1996, 161, 144-7