A possible mechanism was suggested for screw dislocation and micro-pipe nucleation. It was based upon observations, of micro-pipe nucleation at the sites of foreign inclusions, performed using synchrotron white-beam X-ray topography and transmission optical microscopy. It was shown that incorporation of an inclusion into the growing crystal could lead to deformation of the protruding ledge which constituted the over-growing layer. Accommodation of this deformation into the crystal lattice led to the production of pairs of opposite-sign screw dislocations which then propagated with the growing crystal.

The Mechanism of Micro-Pipe Nucleation at Inclusions in Silicon Carbide M.Dudley, X.R.Huang, W.Huang, A.Powell, S.Wang, P.Neudeck, M.Skowronski: Applied Physics Letters, 1999, 75[6], 784-6