The As doping mechanism was studied in (100) CdTe layers which had been grown, using organometallic vapor phase epitaxy, onto (100) GaAs. Assuming 100% activation, the As incorporation efficiency was estimated to be about 0.1%. The As incorporation was dominated by the sticking rate of the As species to the Cd species. Low-temperature photoluminescence data revealed that a neutral-acceptor bound-exciton at 1.5901eV was due to a substitutional As acceptor on a Te site. It was estimated that the As ionization energy was about 0.09eV.

M.Ekawa, K.Yasuda, T.Ferid, M.Saji, A.Tanaka: Journal of Applied Physics, 1992, 71[6], 2669-74