Charge transient measurements were used to study monocrystals of n-type material. The crystals were prepared using the Bridgman or travelling heater methods, and the material was In-doped, undoped, or Sn-doped. The temperature dependence of the capture cross-section was investigated under partial filling conditions. In the case of In-doped samples, the data indicated that the Ec-0.66eV (Bridgman) and Ec-0.68eV (travelling heater) levels were both associated with the same In defect-complex. On the other hand, the Ec-0.34eV (Bridgman) and Ec-0.32eV (travelling heater) levels had different capture mechanisms. An unusual capture behavior of a trap at Ec-0.61eV, in undoped samples, was attributed to a doubly-charged Cd interstitial. In the case of Sn-doped samples, 4 levels were observed and the levels at Ec-0.89eV and Ec-0.43eV were related to the presence of Sn.

C.Ye, J.H.Chen: Journal of Applied Physics, 1990, 67[5], 2475-81