Two possible nucleation mechanisms for edge and screw threading dislocations during vapour-transport growth were investigated. Growth over intentionally deposited C inclusions led to an edge and screw dislocation-density which was some orders of magnitude higher than that in the surrounding crystal. Seeds with mechanical polishing damage were shown to lead to a dislocation density which was nearly 3 orders of magnitude higher than that of seeds which were H-etched. A new linear step source was observed, and was related to an increase in the dislocation density.

Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide E.K.Sanchez, V.D.Heydemann, D.W.Snyder, G.S.Rohrer, M.Skowronski: Materials Science Forum, 2000, 338-342, 63-6