Localized defects in Cu-doped p-type material were studied using Hall-effect, admittance spectroscopy and photoluminescence methods. It was deduced that Cu was incorporated as a substitutional acceptor on Cd sites, with an activation energy of 0.15eV. The present method of preparation ruled out any correlation between the 1.5896eV photoluminescence line and annealing processes, and it could be definitely attributed to excitons which were bound to CuCd acceptors.

J.P.Laurenti, G.Bastide, M.Rouzeyre, R.Triboulet: Solid State Communications, 1988, 67[12], 1127-30