The first direct experimental link between the presence of closed-core screw dislocations in 6H-type epilayers and that of recombination centres, was demonstrated. At every identified closed-core screw dislocation, electron beam-induced current images showed a dark spot which indicated a recombination center. Nomarski optical microscopy and atomic force microscopy revealed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes C.M.Schnabel, M.Tabib-Azar, P.G.Neudeck, S.G.Bailey, H.B.Su, M.Dudley, R.P.Raffaelle: Materials Science Forum, 2000, 338-342, 489-92