An O-related defect was studied, in nominally undoped crystals which had been grown via the high-pressure Bridgman technique, using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based upon a linear relationship between O concentration and the emitted charge from the defect level with an ionization energy of 0.184eV and a capture cross-section of 7 x 10–17cm2, it was shown that the defect was an O complex. Using thermal annealing experiments, it was shown that the defect complex contained Cd vacancies. Using first-principles band structure calculations, the defect level was attributed to the second ionization level of the iso-electronic O-Cd vacancy pair (OTe-VCd)–/2–.

Isoelectronic Oxygen-Related Defect in CdTe Crystals Investigated using Thermoelectric Effect Spectroscopy. S.A.Awadalla, A.W.Hunt, K.G.Lynn, H.Glass, C.Szeles, S.H.Wei: Physical Review B, 2004, 69[7], 075210 (4pp)