The thermodynamic properties of native defects, and their interactions with extrinsic defects, were studied theoretically and experimentally in Sn-doped material. High-temperature (500 to 1000C) in situ galvanomagnetic measurements were used to control the defect equilibria and electrical properties of annealed samples. Defect reactions were studied, during cooling of the samples to room temperature, in the regime of slow diffusion where stoichiometry and doping density were fixed but the densities of various defect configurations changed. The theoretical description of the defects was based upon the quasichemical formalism. It was found that an analysis which included 2 native defects, CdI and VCd, and three Sn-related defects (SnCd, SnI, SnCdVCd) permitted an explanation of all of the principal experimental observations.

Defect Equilibrium and Complex Formation in CdTe(Sn). R.Grill, I.Turkevych, J.Franc, E.Belas, P.Moravec, P.Höschl: Physica Status Solidi C, 2004, 1[4], 727-30