The predominant luminescence emission of excitons bound to a neutral acceptor defect (A0,X) in as-grown high-purity single crystals was studied after a Cd-dip treatment, doping with Cu and Ag, and irradiation with 60Co γ-rays. It was demonstrated that, by Cd-dipping, the dominant (A0,X) emission could be annihilated; to become a double-structure emission with energies at 1.5896 and 1.5885eV. The present doping experiments showed that (A0,X) at 1.5896eV was associated with residual Cu impurities and (A0,X) at 1.5885eV was associated with Ag. Further experiments with γ-irradiation had revealed a new (A0,X) emission at 1.5892eV in the double structure. It was suggested that this emission was associated with Cd-vacancies that were introduced by γ-rays. This appeared to be the first report of isolated Cd-vacancies, exhibiting an (A0,X) emission, with the energy position different from 1.5896eV.

Cd-Vacancy Related Excitonic Emission in CdTe. S.H.Song, J.F.Wang, M.Isshiki: Journal of Crystal Growth, 2003, 257[3-4], 231-6