High temperature Hall effect measurements in CdTe<Cl> single crystals grown by THM and Bridgman techniques at 200-900C under well defined Cd and Te vapor pressure were made. Associates decay at heating from 500 to 700C in THM grown samples was observed. Cd phase pressure influence on electron concentration [e-] in all samples was established. The main point defects present in crystals were: at T < 600C - Cl donors and Cl associates, at T > 700C - Cl donors, Cd vacancies and Cd interstitials. Bridgman grown CdTe<Cl> crystals had [e-] similar to undoped CdTe and differed in Cd vapor pressure dependencies by line slopes. Under Te vapor pressure the samples demonstrated p-type conductivity up to 550C. In this case the hole density changed from [h+] = 1016/cm3 to 3 x 1017/cm3 and did not depend upon the Te vapor pressure.

Point Defect Structure of CdTe<Cl> Crystals at High Temperatures. P.Fochuk, O.Panchuk, L.Shcherbak, P.Siffert: Physica Status Solidi C, 2005, 2[3], 1178-83